DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL

被引：68

作者：

PICRAUX, ST ^{[1
]}

RIMINI, E ^{[1
]}

FOTI, G ^{[1
]}

CAMPISANO, SU ^{[1
]}

机构：

[1] IST STRUTTURA MAT,CATANIA,ITALY

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.18.2078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2078 / 2096

页数：19

共 21 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &
[2] BRICE DK, COMMUNICATION
[3] BRICE DK, 1975, ION IMPLANTATION RAN, V1
[4] CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS
CAMPISANO, SU
FOTI, G
RIMINI, E
PICRAUX, ST
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 371 - 376
[5] CAMPISANO SU, 1975, ATOMIC COLLISIONS SO, P905
[6] EISEN FH, 1973, CHANNELING, pCH14
[7] OFF-AXIS CHANNELING DISORDER ANALYSIS
FOTI, G
BAERI, P
RIMINI, E
CAMPISANO, SU
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5206 - 5213
[8] FOTI G, 1977, ION IMPLANTATION SEM, P247
[9] ENERGY-DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMS
LUGUJJO, E
MAYER, JW
[J]. PHYSICAL REVIEW B, 1973, 7 (05): : 1782 - 1791
[10] MATSUNAMI N, 1975, ATOMIC COLLISIONS SO, P175