CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS

被引：32

作者：

CAMPISANO, SU ^{[1
]}

FOTI, G ^{[1
]}

RIMINI, E ^{[1
]}

PICRAUX, ST ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(78)90890-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：371 / 376

页数：6

共 10 条

[1]

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[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

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[4]

FOTI G, 1977, ION IMPLANTATION, P246

[5]

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[6]

MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[7] ION CHANNELING STUDIES OF CRYSTALLINE PERFECTION OF EPITAXIAL LAYERS [J].

PICRAUX, ST .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :587-593

[8] CORRELATION OF ION CHANNELING AND ELECTRON-MICROSCOPY RESULTS IN EVALUATION OF HETEROEPITAXIAL SILICON [J].

PICRAUX, ST ;

THOMAS, GJ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :594-602

[9]

PICRAUX ST, UNPUBLISHED

[10] DECHANNELING MEASUREMENTS OF DEFECT DEPTH PROFILES AND EFFECTIVE CROSS-CHANNEL DISTRIBUTION OF MISALIGNED ATOMS IN ION-IRRADIATED GOLD [J].

PRONKO, PP .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :249-259

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