CORRELATION OF ION CHANNELING AND ELECTRON-MICROSCOPY RESULTS IN EVALUATION OF HETEROEPITAXIAL SILICON

被引：23

作者：

PICRAUX, ST ^{[1
]}

THOMAS, GJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：594 / 602

页数：9

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[8] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J].

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[9]

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[10]

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