VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE

被引：34

作者：

IPRI, AC

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来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 01期

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D O I：

10.1063/1.1653956

中图分类号：

O59 [应用物理学];

学科分类号：

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