ANODIC SULFIDE FILMS ON HG1-XCDXTE

被引：54

作者：

NEMIROVSKY, Y

BURSTEIN, L

机构：

来源：

关键词：

D O I：

10.1063/1.94760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 444

页数：2

共 11 条

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[3] CATAGNUS PC, 1976, Patent No. 3977018
[4] KINCH M, 1981, SEMICONDUCTORS SEMIM, V18
[5] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE
NEMIROVSKY, Y
KIDRON, I
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (10) : 831 - 837
[6] THE INTERFACE OF PLASMA-ANODIZED HG1-XCDXTE
NEMIROVSKY, Y
GOSHEN, R
KIDRON, I
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4888 - 4895
[7] PLASMA ANODIZATION OF HG1-XCDXTE
NEMIROVSKY, Y
GOSHEN, R
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 813 - 815
[8] ANODIC OXIDE-FILMS ON HG1-XCDXTE
NEMIROVSKY, Y
FINKMAN, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 768 - 770
[9] REINE MB, 1981, SEMICONDUCTORS SEMIM, V18
[10] RICHTER HJ, 1981, SPRINGER TRACTS MODE