THE INTERFACE OF PLASMA-ANODIZED HG1-XCDXTE

[1] CATAGNUS PC, 1976, Patent No. 3977018

[2] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 237 - 238

[3] DELLOCA CJ, 1971, PHYSICS THIN FILMS, V6

[4] GOSHEN R, 1981, THESIS TECHNION ISRA

[5] HOLLAHAN JR, 1974, TECHNIQUES APPLICATI

[6] JACOB A, 1974, Patent No. 3806365

[7] AUTOMATED MEASUREMENT AND ANALYSIS OF MIS INTERFACES IN NARROW-BANDGAP SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 546 - 551

[8] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE [J]. SOLID-STATE ELECTRONICS, 1979, 22 (10) : 831 - 837

[9] PLASMA ANODIZATION OF HG1-XCDXTE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 813 - 815

[10] ANODIC OXIDE-FILMS ON HG1-XCDXTE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 768 - 770

[1] CATAGNUS PC, 1976, Patent No. 3977018

[2] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 237 - 238

[3] DELLOCA CJ, 1971, PHYSICS THIN FILMS, V6

[4] GOSHEN R, 1981, THESIS TECHNION ISRA

[5] HOLLAHAN JR, 1974, TECHNIQUES APPLICATI

[6] JACOB A, 1974, Patent No. 3806365

[7] AUTOMATED MEASUREMENT AND ANALYSIS OF MIS INTERFACES IN NARROW-BANDGAP SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 546 - 551

[8] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE [J]. SOLID-STATE ELECTRONICS, 1979, 22 (10) : 831 - 837

[9] PLASMA ANODIZATION OF HG1-XCDXTE [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 813 - 815

[10] ANODIC OXIDE-FILMS ON HG1-XCDXTE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 768 - 770