FORMATION OF SHALLOW PHOTO-DIODES BY IMPLANTATION OF BORON INTO MERCURY CADMIUM TELLURIDE

被引：13

作者：

PITCHER, PG

HEMMENT, PLF

DAVIS, QV

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 25-2期

关键词：

D O I：

10.1049/el:19820745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1090 / 1092

页数：3

共 9 条

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TENNANT, WE ;

RIEDEL, RA ;

MAGEE, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :251-254

[2] ION-IMPLANTATION STUDY OF HGCDTE [J].

BUBULAC, LO ;

TENNANT, WE ;

SHIN, SH ;

WANG, CC ;

LANIR, M ;

GERTNER, ER ;

MARSHALL, ED .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :495-500

[3]

BUEHLER MG, 1966, EEL66064 STANF RES R

[4]

DEARNALEY G., 1973, ION IMPLANTATION

[5]

DESTEFANIS GL, 1982, P INT C 2 6 COMPOUND

[6]

Lindhard J., 1968, K DAN VIDENSK SELSK, V36, P10

[7]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[8]

Willardson R. K., 1981, SEMICONDUCTORS SEMIM, V18

[9] EFFECTS OF IMPLANTATION AND ANNEALING TEMPERATURES ON IMPLANTATION INDUCED DAMAGE IN HGCDTE [J].

WU, SY ;

CHOYKE, WJ ;

TAKEI, WJ ;

NOREIKA, AJ ;

FRANCOMBE, MH ;

IRWIN, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :255-258

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