CURRENT GENERATION MECHANISMS IN SMALL BAND-GAP HGCDTE P-N-JUNCTIONS FABRICATED BY ION-IMPLANTATION

被引：48

作者：

DEWAMES, RE

WILLIAMS, GM

PASKO, JG

VANDERWYCK, AHB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90814-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：849 / 858

页数：10

共 14 条

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[2]

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[7]

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[8]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[9] PERFORMANCE OF PV HGCDTE ARRAYS FOR 1-14-MU-M APPLICATIONS [J].

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[10]

LANIR M, 1979, IEOM

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