TUNNEL CONTRIBUTION TO HG1-XCDXTE AND PB1-XSNXTE P-N-JUNCTION DIODE CHARACTERISTICS

被引：50

作者：

ANDERSON, WW

机构：

来源：

INFRARED PHYSICS | 1980年 / 20卷 / 06期

关键词：

D O I：

10.1016/0020-0891(80)90052-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

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页码：353 / 361

页数：9

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