BORON AND INDIUM ION-IMPLANTED JUNCTIONS IN HGCDTE GROWN ON CDTE AND CDTE/AL2O3

被引：29

作者：

BUBULAC, LO

LO, DS

TENNANT, WE

EDWALL, DD

ROBINSON, JC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574049

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2169 / 2173

页数：5

共 19 条

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[2] DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE
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[3] SOME ASPECTS OF LI BEHAVIOR IN ION-IMPLANTED HGCDTE
BUBULAC, LO
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EDWALL, DD
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[4] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
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[6] BUBULAC LO, 1975, J CRYST GROWTH, V72, P478
[7] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE
CAPPER, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 280 - 299
[8] INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 171 - 175
[9] ION-IMPLANTATION IN HG1-XCDXTE
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 567 - 580
[10] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE
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