ION-IMPLANTATION IN HG1-XCDXTE

被引：59

作者：

DESTEFANIS, GL

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

CADMIUM MERCURY TELLURIDE;

D O I：

10.1016/0167-5087(83)90854-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：567 / 580

页数：14

共 64 条

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[7] BRUNTHALER G, 1981, LECTURES NOTES PHYSI, V152, P458
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 62 (1-2): : 69 - 75
[9] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
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RIEDEL, RA
MAGEE, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 251 - 254
[10] ION-IMPLANTATION STUDY OF HGCDTE
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MARSHALL, ED
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 495 - 500