SOME ASPECTS OF LI BEHAVIOR IN ION-IMPLANTED HGCDTE

被引：21

作者：

BUBULAC, LO

TENNANT, WE

RIEDEL, RA

BAJAJ, J

EDWALL, DD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572248

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1646 / 1650

页数：5

共 16 条

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[2] ION-IMPLANTATION STUDY OF HGCDTE
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TENNANT, WE
SHIN, SH
WANG, CC
LANIR, M
GERTNER, ER
MARSHALL, ED
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 495 - 500
[3] BUBULAC LO, 1981, JUN M IRIS INFR IM S
[4] USE OF RUTHERFORD BACKSCATTERING AND CHANNELING IN THE STUDY OF (HG,CD)TE
CONWAY, KL
GIBBONS, JF
SIGMON, TW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 212 - 214
[5] COPPER P, 1982, J CRYST GROWTH, V57, P280
[6] ELECTRICAL AND OPTICAL-PROPERTIES OF ION-IMPLANTED HG1-XCDXTE/CDTE EPILAYERS
DESTEFANIS, GL
BOCH, R
ROUSSILLE, R
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 270 - 275
[7] DESTEFANIS GL, 1982, ION BEAM MODIFICATIO
[8] SECONDARY ION MASS ANALYSIS - TECHNIQUE FOR 3-DIMENSIONAL CHARACTERIZATION
EVANS, CA
[J]. ANALYTICAL CHEMISTRY, 1972, 44 (13) : A67 - &
[9] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE
JOHNSON, ES
SCHMIT, JL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) : 25 - 38
[10] LOCALIZED VIBRATIONAL-MODES AND DEFECTS OF LI-DOPED CDTE AND ZNSE
KO, JS
SPITZER, WG
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : 5593 - 5604