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INFLUENCE OF CENTRAL VALLEY EFFECTIVE MASS AND ALLOY SCATTERING ON TRANSIENT DRIFT VELOCITY IN GA1-XINXP1-YASY

被引：9
作者：
LITTLEJOHN, MA
ARLEDGE, LA
GLISSON, TH
HAUSER, JR
机构：
[1] Electrical Engineering Department, North Carolina State University, Raleigh
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 19期
关键词：
Carrier mobility; Conduction bands; Gallium arsenide; III–V semiconductors;
D O I：
10.1049/el:19790422
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The instantaneous ensemble-averaged and time-averaged velocity of electrons are presented for Ga0·27In0·73P0·4As0·6, and the results are compared to those for GaAs. The results indicate that both the effective mass in the Γ conduction band and alloy scattering are very critical in determining the transient (or velocity-overshoot) characteristic as well as the static velocity-field characteristic for this quaternary material. © 1979, The Institution of Electrical Engineers. All rights reserved.
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页码：586 / 588
页数：3
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