OPTICAL BAND-GAP AND PHOTOLUMINESCENCE STUDIES IN BLUE-BAND REGION OF ZN-DOPED LIINS2 SINGLE-CRYSTALS

被引：13

作者：

KURIYAMA, K ^{[1
]}

KATO, T ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 11期

关键词：

D O I：

10.1016/0038-1098(94)90360-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence in blue-band region of Zn-doped LiInS2, which comprises the pseudowurtzite structure in an orthorhombic unit cell, is studied. The optical band gap is found to be direct nature of 3.39 eV at 300 K. In comparison with undoped crystals, the band-gap shrinkage of 160 meV arises from the expansion of the lattice due to Zn-doping. The visible-emission peak is shifted from 435 nm (2.85 eV) to 480 nm (2.58 eV) at temperatures ranging from 13 to 300K. It is proposed that the origin of the bright blue-band emission is a multiple donor-valence-band transition related to the S vacancy and antisite defects such as Zn on a Li site and In on a Li site.

引用

页码：959 / 962

页数：4

共 17 条

[11] OBSERVATION OF GA ANTISITE DEFECT IN ELECTRON-IRRADIATED SEMIINSULATING GAAS BY PHOTOLUMINESCENCE [J].

KURIYAMA, K ;

YOKOYAMA, K ;

TOMIZAWA, K ;

TAKEUCHI, T ;

TAKAHASHI, H .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :843-845

[12]

KURIYAMA K, 1993, IN PRESS 9TH P INT T

[13] ANALYSIS OF ELECTRICAL AND LUMINESCENT PROPERTIES OF CULNSE2 [J].

MIGLIORATO, P ;

SHAY, JL ;

KASPER, HM ;

WAGNER, S .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1777-1782

[14] THE INTERPRETATION OF THE PROPERTIES OF INDIUM ANTIMONIDE [J].

MOSS, TS .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (418) :775-782

[15]

Phillips J. C., 1973, BONDS BANDS SEMICOND

[16]

Shay J. L, 1975, TERNARY CHALCOPYRITE, V11, P73, DOI 10.1016/B978-0-08-017883-7.50012-3

[17] ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].

TELL, B ;

SHAY, JL ;

KASPER, HM .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2469-&

← 1 2 →