ANNEALING OF DEFECTS AT HIGH-TEMPERATURE IRRADIATION OF SILICON BY ACCELERATED IONS

被引：2

作者：

LEBEDEV, SY ^{[1
]}

OMELYANOVSKAYA, NM ^{[1
]}

机构：

[1] PHYS & POWER ENGN INST, OBNINSK, USSR

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 22卷 / 02期

关键词：

D O I：

10.1080/00337577408232159

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：135 / 137

页数：3

共 13 条

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NELSON, RS ;

BARNES, RS .

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