82NM OF CONTINUOUS TUNABILITY FOR AN EXTERNAL CAVITY SEMICONDUCTOR-LASER

被引：54

作者：

FAVRE, F

LEGUEN, D

机构：

[1] Centre National d'Etudes des Télécommunications

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 02期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wavelength tunability of 82 nm without mode hopping has been obtained with an external cavity semiconductor laser emitting around 1540 nm by combined rotation/translation of a diffraction grating. This demonstrates for the first time the tunability of an optical oscillator having a spectral purity better than 100 kHz over more than 10 000 GHz.

引用

页码：183 / 184

页数：2

共 7 条

[1] 242NM CONTINUOUS TUNING FROM A GRIN-SC-MQW-BH INGAASP LASER IN AN EXTENDED CAVITY [J].