EXTERNAL GRATING TUNABLE MQW LASER WITH WIDE TUNING RANGE OF 240 NM

被引：47

作者：

TABUCHI, H

ISHIKAWA, H

机构：

[1] Fujitsu Laboratories, Atsugi, 243-01, 10-1, Morinosato-Wakamiya

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 11期

关键词：

Lasers and laser applications; Semiconductor laser; Tuning;

D O I：

10.1049/el:19900484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very wide tuning range in an external grating tunable InGaAs/InGaAsP MQW laser is demonstrated. Second subband recombination occurs in MQW diode at high current density injection. This contributes to gainexpansion and a tuning range of 240 nm was obtained when operated continuously (CW) atroom temperature. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：742 / 743

页数：2

共 3 条

[1] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].