PHYSICAL CHARACTERIZATION OF HALOGENATED AND HYDROGENATED AMORPHOUS-SILICON FILMS

被引：14

作者：

AUGELLI, V

MURRI, R

GALASSINI, S

TEPORE, A

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,BARI,ITALY

[2] UNIV LECCE,IST FIS,I-73100 LECCE,ITALY

来源：

关键词：

D O I：

10.1016/0040-6090(80)90582-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 320

页数：6

共 10 条

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[J]. THIN SOLID FILMS, 1980, 67 (01) : 103 - 107
[3] CARLSON DE, 1977, RCA REV, V38, P211
[4] FRIEDMAN L, 1973, ELECTRONIC STRUCTURA, pCH9
[5] MOTT NF, 1971, ELECTRONIC PROCESSES, pCH7
[6] LOCALIZED STATES IN AMORPHOUS AND POLYCRYSTALLIZED SI
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OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 985 - 991
[7] SPEAR WE, 1976, PHOTOCONDUCTIVITY RE, pCH6
[8] Tauc J., 1974, AMORPHOUS LIQUID SEM
[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON
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FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 29 - 42
[10] OPTICAL AND PHOTOCONDUCTIVE PROPERTIES OF DISCHARGE-PRODUCED AMORPHOUS SILICON
ZANZUCCHI, PJ
WRONSKI, CR
CARLSON, DE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5227 - 5236