MAGNETORESONANT TUNNELING FROM A LIGHTLY DOPED CONTACT REGION INTERACTING WITH QUASI-2-DIMENSIONAL STATES IN AN ACCUMULATION LAYER

被引:8
作者
BUCHANAN, M
LIU, HC
POWELL, TG
WASILEWSKI, ZR
机构
[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa
关键词
D O I
10.1063/1.346227
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the magnetic field dependence of the tunneling current in GaAs/AlAs double barrier structures. We report new results, periodic with the inverse of the magnetic field, on a weak feature on the rising side of the main resonant tunneling peak. This feature is attributed to resonant tunneling from a lightly doped contact region interacting with the quasi-two-dimensional state in the accumulation layer. A qualitative interpretation is given.
引用
收藏
页码:4313 / 4315
页数:3
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