MAGNETORESONANT TUNNELING FROM A LIGHTLY DOPED CONTACT REGION INTERACTING WITH QUASI-2-DIMENSIONAL STATES IN AN ACCUMULATION LAYER

被引：8

作者：

BUCHANAN, M

LIU, HC

POWELL, TG

WASILEWSKI, ZR

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the magnetic field dependence of the tunneling current in GaAs/AlAs double barrier structures. We report new results, periodic with the inverse of the magnetic field, on a weak feature on the rising side of the main resonant tunneling peak. This feature is attributed to resonant tunneling from a lightly doped contact region interacting with the quasi-two-dimensional state in the accumulation layer. A qualitative interpretation is given.

引用

页码：4313 / 4315

页数：3

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