METALLIC BEHAVIOR INDUCED BY LI-DOPING IN DCNOI-CU SYSTEM

被引:11
作者
KATO, R
SAWA, H
AONUMA, S
OKANO, Y
KAGOSHIMA, S
KOBAYASHI, A
KOBAYASHI, H
机构
[1] UNIV TOKYO,COLL GEN EDUC,DEPT PURE & APPL SCI,TOKYO 113,JAPAN
[2] UNIV TOKYO,FAC SCI,DEPT CHEM,TOKYO 113,JAPAN
[3] TOHO UNIV,FAC SCI,DEPT CHEM,FUNABASHI,CHIBA 274,JAPAN
关键词
MOLECULAR CONDUCTOR; DCNQI; ANION RADICAL SALT; MIXED VALENCY; ELECTRICAL CONDUCTIVITY; HEAVY ELECTRON; LOW-TEMPERATURE CRYSTAL STRUCTURE;
D O I
10.1016/0379-6779(93)90339-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Li-doping has shown drastic effect on temperature-dependence of resistivity in the mixed valence Cu salt (DBr-DCNQI)2Cu. (DBr-DCNQI)2Li is isostructural with (DBr-DCNQI)2Cu and is a semiconductor. The pure Cu salt exhibits first-order metal-insulator transition at 160 K. A small amount of Li+ lowered the transition temperature. In the course of further increase in the Li concentration, a 'reentrance'' of the metallic state was observed at low temperatures. In this region, both of non-metallic and low-temperature metallic states were accompanied by a three-fold lattice distortion along the crystallographic c axis. While the Li-doping changes the formal charge of the DBr-DCNQI molecule continuously, the observed period of the superstructure was always constant. The electronic state at this ''reentrance'' region is discussed in the light of heavy electron. Similar stable metallic state induced by the Li-doping was observed in (DMe-DCNQI-d7)2Cu1-xLix.
引用
收藏
页码:1864 / 1869
页数:6
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