SIZE EFFECTS AND CHARGE-DENSITY-WAVE PINNING IN NB1-XTIXSE3 - EVIDENCE FOR WEAK PINNING BY A NONISOELECTRONIC IMPURITY - REPLY

被引：10

作者：

DICARLO, DA ^{[1
]}

MCCARTEN, J ^{[1
]}

THORNE, RE ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.47.7618

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review our investigations of charge-density-wave pinning in NbSe3. We show that (1) the measured E(T) - r(R) relations for both Ta and Ti impurities are consistent with weak pinning; (2) the pinning strength of Ti impurities is roughly 40 times larger than that of Ta impurities; and (3) the size dependence of charge-density-wave (CDW) properties and direct measurements of CDW correlation lengths are consistent with a size-dependent crossover in the weak-pinning dimensionality.

引用

页码：7618 / 7621

页数：4

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