ELECTRICAL-CONDUCTION AND DIELECTRIC-BREAKDOWN IN SPUTTER-DEPOSITED SILICON DIOXIDE FILMS ON SILICON

被引：25

作者：

SUYAMA, S ^{[1
]}

OKAMOTO, A ^{[1
]}

SERIKAWA, T ^{[1
]}

TANIGAWA, H ^{[1
]}

机构：

[1] KYUSHU UNIV, FAC SCI, DEPT PHYS, HIGASHI KU, FUKUOKA 812, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2360 / 2363

页数：4

共 23 条

[1]

AVRON M, 1978, PHYSICS SIO2 ITS INT, P46

[2]

CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P260

[3] ELECTRICAL CONDUCTIVITY OF FUSED QUARTZ [J].

COHEN, J .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (07) :795-800

[4] ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

THEIS, TN ;

KIRTLEY, JR ;

PESAVENTO, FL ;

DONG, DW ;

BRORSON, SD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1214-1238

[5] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :50-54

[6] FOWLER-NORDHEIM EMISSION FROM NONPLANAR SURFACES [J].

ELLIS, RK .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :330-332

[7]

HILL M, 1971, THIN SOLID FILMS, V8, pR21

[8]

JOHANSEN IT, 1966, J APPL PHYS, V37, P479

[9] DEVICE-QUALITY SIO2-FILMS ON INP AND SI OBTAINED BY OPERATING THE PYROLYTIC CVD REACTOR IN THE RETARDATION REGIME [J].

LAKHANI, AA .

SOLID-STATE ELECTRONICS, 1984, 27 (10) :921-924

[10] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

← 1 2 3 →