DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] ELECTRIC BREAKDOWN IN IONIC CRYSTALS [J]. PHYSICAL REVIEW, 1949, 76 (09): : 1394 - 1402

[3] CHOU NJ, 1970, J ELECTROCHEM SOC, V117, P1288

[4] DIMARIA DJ, 1973, THESIS LEHIGH U

[5] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (24) : 2259 - +

[6] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[7] DISTEFANO TH, AFCRLTR740263 AIR FO

[8] DISTEFANO TH, 1975, VAC SCI TECHNOL, V12, P37

[9] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J]. PHYSICA STATUS SOLIDI, 1964, 4 (02): : 311 - 324

[10] FRANZ W, 1956, HDB PHYSIK, V17, P155

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &

[2] ELECTRIC BREAKDOWN IN IONIC CRYSTALS [J]. PHYSICAL REVIEW, 1949, 76 (09): : 1394 - 1402

[3] CHOU NJ, 1970, J ELECTROCHEM SOC, V117, P1288

[4] DIMARIA DJ, 1973, THESIS LEHIGH U

[5] BND EDGE OF AMORPHOUS SIO2 BY PHOTOINJECTION AND PHOTOCONDUCTIVITY MEASUREMENTS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (24) : 2259 - +

[6] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[7] DISTEFANO TH, AFCRLTR740263 AIR FO

[8] DISTEFANO TH, 1975, VAC SCI TECHNOL, V12, P37

[9] THICKNESS INFLUENCE IN BREAKDOWN PHENOMENA OF THIN DIELECTRIC FILMS [J]. PHYSICA STATUS SOLIDI, 1964, 4 (02): : 311 - 324

[10] FRANZ W, 1956, HDB PHYSIK, V17, P155