EVALUATION OF CHANNEL HOT CARRIER EFFECTS IN N-MOS TRANSISTORS AT 77-K WITH THE CHARGE PUMPING TECHNIQUE

被引：4

作者：

HEREMANS, P ^{[1
]}

SUN, YC ^{[1
]}

GROESENEKEN, G ^{[1
]}

MAES, HE ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90107-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：313 / 318

页数：6

共 6 条

[1]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[2] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[3] EVALUATION OF HOT CARRIER DEGRADATION OF N-CHANNEL MOSFETS WITH THE CHARGE PUMPING TECHNIQUE [J].

HEREMANS, P ;

MAES, HE ;

SAKS, N .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :428-430

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :268-275

[5]

Takeda E., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P60

[6] HOT-ELECTRON-INDUCED INTERFACE STATE GENERATION IN N-CHANNEL MOSFETS AT 77-K [J].

VONBRUNS, SL ;

ANDERSON, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :75-82

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