PSEUDOPOTENTIAL CALCULATIONS OF BAND STRUCTURE OF GAAS, INAAS AND (GAIN) AS ALLOYS

被引:51
作者
JONES, D
LETTINGTON, AH
机构
[1] Royal Radar Establishment, Malvern, Worcestershire England
关键词
D O I
10.1016/0038-1098(69)90361-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Pseudopotential band structure calculations have been performed for GaAs, InAs and (GaIn) As alloys. These calculations are based on the Heine-Abarenkov model potential screened to a local approximation with Penn's expression for the dielectric constant. The calculated band gaps agree well with experimental values. © 1969.
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页码:1319 / +
页数:1
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