ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER HEIGHTS OF (111) NISI2/SI A-TYPE AND B-TYPE INTERFACES

被引：131

作者：

DAS, GP ^{[1
]}

BLOCHL, P ^{[1
]}

ANDERSEN, OK ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

GUNNARSSON, O ^{[1
]}

机构：

[1] MAX PLANCK INST,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.63.1168

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1168 / 1171

页数：4

共 24 条

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