MODEL FOR HYDROGEN ISOTOPE BACKSCATTERING, TRAPPING AND DEPTH PROFILES IN CARBON AND AMORPHOUS SILICON

被引：82

作者：

COHEN, SA

MCCRACKEN, GM

机构：

[1] Plasma Physics Laboratory, Princeton University, Princeton

来源：

JOURNAL OF NUCLEAR MATERIALS | 1979年 / 84卷 / 1-2期

关键词：

D O I：

10.1016/0022-3115(79)90159-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model for low-energy hydrogen trapping and backscattering in carbon and amorphous silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident-ion energy distribution. The results obtained for reflection coefficients and for saturation doses are in good agreement with those obtained experimentally as described in the companion paper. The use of the model for tokamak plasma diagnosis is discussed. © 1979.

引用

页码：157 / 166

页数：10

共 35 条

[1] Bottiger J., 1971, Radiation Effects, V11, P69, DOI 10.1080/00337577108230451
[2] Bottiger J., 1973, Radiation Effects, V20, P65, DOI 10.1080/00337577308232267
[3] INTERACTIONS OF 5-30 KEV DEUTERONS WITH A CARBON SURFACE
BRAGANZA, CM
ERENTS, SK
MCCRACKEN, GM
[J]. JOURNAL OF NUCLEAR MATERIALS, 1978, 75 (02) : 220 - 225
[4] BRICE DK, COMMUNICATION
[5] BRICE DK, 1972, RAD EFF, V13, P215
[6] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
CARLSON, DE
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
[7] CAUSEY RA, UNPUBLISHED
[8] CHANDRASEKHAR S, 1943, REV MOD PHYS, V15, P3
[9] APPLICATION OF NUCLEAR-REACTIONS FOR QUANTITATIVE HYDROGEN ANALYSIS IN A VARIETY OF DIFFERENT MATERIALS PROBLEMS
CLARK, GJ
WHITE, CW
ALLRED, DD
APPLETON, BR
KOCH, FB
MAGEE, CW
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 9 - 18
[10] LONG-TERM CHANGES IN SURFACE CONDITIONS OF PLT
COHEN, SA
DYLLA, HF
ROSSNAGEL, SM
PICRAUX, ST
BORDERS, JA
MAGEE, CW
[J]. JOURNAL OF NUCLEAR MATERIALS, 1978, 76-7 (1-2) : 459 - 471

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