RECOMBINATION IN HEAVILY DOPED PLANAR DIODES

A process is described which produces a shallow pn-junction device with heavy surface doping and very high collection efficiency. Electron-beam techniques were used to measure collection efficiency as a function of depth and to modulate the surface recombination velocity through an MOS capacitor fabricated on the diode. The results of these studies indicate that surface recombination is the dominant effect on carrier loss.