BIT PACKING DENSITY OF BEAMOS TARGET

[1] ARNTZ FO, 1976, INT SOLID STATE C PH, P176

[2] ASUMAN GA, 1975, APPL PHYS LETT, V26, P173

[3] COHEN MS, 1974, J APPL PHYS, V46, P535

[4] SPATIAL DISTRIBUTION OF FLUORESCENT RADIATION EMISSION CAUSED BY AN ELECTRON BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3767 - +

[5] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[6] DIODE DETECTION OF INFORMATION STORED IN ELECTRON-BEAM ADDRESSED MOS STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1974, 24 (09) : 419 - 421

[7] EVERHART TE, 1971, J APPL PHYS, V42, P5836

[8] PAIR-PRODUCTION ENERGIES IN SILICON AND GERMANIUM BOMBARDED WITH LOW-ENERGY ELECTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (07) : 3202 - +

[9] GRUN AE, 1957, Z NATURFORSCH PT A, V12, P89

[10] NEW METHOD OF OBSERVING ELECTRON PENETRATION PROFILES IN SOLIDS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 7 - &

[1] ARNTZ FO, 1976, INT SOLID STATE C PH, P176

[2] ASUMAN GA, 1975, APPL PHYS LETT, V26, P173

[3] COHEN MS, 1974, J APPL PHYS, V46, P535

[4] SPATIAL DISTRIBUTION OF FLUORESCENT RADIATION EMISSION CAUSED BY AN ELECTRON BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3767 - +

[5] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[6] DIODE DETECTION OF INFORMATION STORED IN ELECTRON-BEAM ADDRESSED MOS STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1974, 24 (09) : 419 - 421

[7] EVERHART TE, 1971, J APPL PHYS, V42, P5836

[8] PAIR-PRODUCTION ENERGIES IN SILICON AND GERMANIUM BOMBARDED WITH LOW-ENERGY ELECTRONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (07) : 3202 - +

[9] GRUN AE, 1957, Z NATURFORSCH PT A, V12, P89

[10] NEW METHOD OF OBSERVING ELECTRON PENETRATION PROFILES IN SOLIDS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 7 - &