DESIGN CONSIDERATIONS FOR RESONANT TRAVELLING-WAVE IMPATT OSCILLATORS

被引：10

作者：

HAMBLETON, KG ^{[1
]}

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD, ENGLAND

来源：

关键词：

D O I：

10.1080/00207217308938537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：225 / 244

页数：20

共 9 条

[1]

BROOK P, 1971, 8 P INT C MICR OPT G, P79

GEWARTOW.JW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (06) :1139-&

[3]

HAMBLETON KG, 1969, 1969 IPPS C SOL STAT

[4] A 2-PORT IMPATT DIODE TRAVELING WAVE AMPLIFIER [J].

MIDFORD, TA ;

BOWERS, HC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (10) :1724-&

[5]

Ramo S., 1944, FIELDS WAVES MODERN

[6] LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].

SCHARFETTER, DL ;

GUMMEL, HK .

[7] NEW TECHNIQUE FOR CHARACTERIZATION OF MICROWAVE AVALANCHE DIODES [J].

SHACKLE, PW .

[8]

VANIPEREN BB, 1971, 8 P C MICR OPT GEN A, P727

[9]

WUENSCHE C, 1971, 8 P C MICR OPT GEN A, P721