A 2-PORT IMPATT DIODE TRAVELING WAVE AMPLIFIER

被引:11
作者
MIDFORD, TA
BOWERS, HC
机构
[1] General Electric Co., Electronics Lab., Syracuse
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 10期
关键词
D O I
10.1109/PROC.1968.6715
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Traveling wave amplification has been obtained in an IMPATT diode fabricated in the form of a long, narrow strip and imbedded in a strip-line circuit. The results of an analysis of this device and experimental observation of gain and phase shift are reported. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:1724 / &
相关论文
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[1]   HIGH-FREQUENCY NEGATIVE-RESISTANCE CIRCUIT PRINCIPLES FOR ESAKI DIODE APPLICATIONS [J].
HINES, ME .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :477-513
[2]  
MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143
[3]  
WHEELER HA, 1965, IEEE T, VMT13, P172