THERMOELECTRIC PROPERTIES OF HEAVILY DOPED HOT-PRESSED GERMANIUM-SILICON ALLOYS

被引:16
作者
ROWE, DM
BUNCE, RW
机构
[1] Department of Applied Physics, University of Wales, Institute of Science and Technology, Cardiff
关键词
D O I
10.1088/0022-3727/2/11/302
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical resistivity and Seebeck coefficient have been measured on a series of hot-pressed Ge-Si alloys over the temperature range 300-1200°K and Hall mobility in the range 300-1000°K. The results indicate that some specimens possess mobilities and Seebeck coefficients close to single-crystal values. Making use of available thermal resistivity data the maximum efficiency of a single couple generating device constructed from the best p-type and n-type alloys was computed to be 8% when operating between 300-1000°K.
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页码:1497 / &
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