NOVEL ALGALNAS ALLNAS LASERS EMITTING AT 1 MU-M

We report the first AlGaInAs/AlInAs lasers emitting at 1 μm. The lasers are grown by organometallic chemical vapor deposition lattice matched to an InP substrate. We achieved 1.6 kA/cm2 threshold current density and 370 mW output power from 25-μm-wide gain-guided double heterostructure lasers. The lasers exhibit linear optical power versus current characteristics and stable near- and far-field patterns. Threshold currents as low as 50 mA were obtained with 7-μm-wide ridge-waveguide index-guided lasers. To our knowledge, this threshold current and the threshold current density are the lowest reported to date for lasers made with this material system.