NEW CURRENT INJECTION 1.5-MU-M WAVELENGTH GAXALYIN1-X-YAS/INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

TSANG, WT

OLSSON, NA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.93801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：922 / 924

页数：3

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[3] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY
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[4] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP
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[7] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3861 - 3864
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TSANG, WT
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