MOLECULAR-BEAM EPITAXIALLY GROWN 1.3 MU-M GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS

被引：7

作者：

TSANG, WT

REINHART, FK

DITZENBERGER, JA

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 18期

关键词：

D O I：

10.1049/el:19820530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：785 / 786

页数：2

共 9 条

[1]

ARAI S, 1980, IEEE J QUANTUM ELECT, V16, P37

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021

[3] MBE-GROWN INGAAS/INP BH LASERS WITH LPE BURYING LAYERS [J].

KAWAMURA, Y ;

NOGUCHI, Y ;

ASAHI, H ;

NAGAI, H .

ELECTRONICS LETTERS, 1982, 18 (02) :91-92

[4] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J].

MILLER, BI ;

MCFEE, JH ;

MARTIN, RJ ;

TIEN, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :44-47

[5] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J].

MILLER, BI ;

MCFEE, JH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) :1310-1317

[6] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J].

NAHORY, RE ;

POLLACK, MA .

ELECTRONICS LETTERS, 1978, 14 (23) :727-729

[7] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :654-656

[8] AL0.48IN0.52AS-GA0.47IN0.53AS-AL0.48IN0.52AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65-MU-M [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :3861-3864

[9]

TSANG WT, 1982, APPL PHYS LETT, V35

← 1 →