THE PHOTOIONIZATION CROSS-SECTION OF DEEP-LEVEL IMPURITIES IN SEMICONDUCTORS

[1] Abramowitz M., 1972, HDB MATH FUNCTIONS

[2] A COMPARISON OF SIMPLE THEORETICAL-MODELS FOR THE PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10): : 2027 - 2039

[3] SHALLOW IMPURITY STATES IN SEMICONDUCTORS - ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 235 - 245

[4] BALTENKOV AS, 1976, SOV PHYS SEMICOND+, V10, P688

[5] THE CALCULATION OF THE ABSOLUTE STRENGTHS OF SPECTRAL LINES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 242 (842) : 101 - 122

[6] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[7] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1116 - &

[8] BEBB HB, 1971, 3RD P INT C PHOT STA, P245

[9] A GENERAL FORMULA FOR THE CALCULATION OF ATOMIC PHOTO-IONIZATION CROSS SECTIONS [J]. MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY, 1960, 120 (02) : 121 - 151

[10] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) : 43 - 53

[1] Abramowitz M., 1972, HDB MATH FUNCTIONS

[2] A COMPARISON OF SIMPLE THEORETICAL-MODELS FOR THE PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10): : 2027 - 2039

[3] SHALLOW IMPURITY STATES IN SEMICONDUCTORS - ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 235 - 245

[4] BALTENKOV AS, 1976, SOV PHYS SEMICOND+, V10, P688

[5] THE CALCULATION OF THE ABSOLUTE STRENGTHS OF SPECTRAL LINES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 242 (842) : 101 - 122

[6] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[7] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1116 - &

[8] BEBB HB, 1971, 3RD P INT C PHOT STA, P245

[9] A GENERAL FORMULA FOR THE CALCULATION OF ATOMIC PHOTO-IONIZATION CROSS SECTIONS [J]. MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY, 1960, 120 (02) : 121 - 151

[10] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) : 43 - 53