H-2-ASTERISK DEFECT IN CRYSTALLINE SILICON

被引:173
作者
HOLBECH, JD
NIELSEN, BB
JONES, R
SITCH, P
OBERG, S
机构
[1] UNIV EXETER, DEPT PHYS, EXETER EX4 4QL, ENGLAND
[2] UNIV LULEA, DEPT MATH, S-95187 LULEA, SWEDEN
关键词
D O I
10.1103/PhysRevLett.71.875
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Detailed infrared studies have been carried out on proton- and deuteron-implanted Si. A dominant trigonal defect involving a pair of inequivalent hydrogen atoms has been identified, with local modes at 2061.5, 1838.3, 1599. 1, and 817.2 cm-1. The structure, the local modes, and the isotopic shifts of the H-2* defect have been calculated using ab initio pseudopotential cluster theory. The structure is consistent with channeling and uniaxial stress experiments. The calculated frequencies and isotopic shifts are in close agreement with those observed.
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收藏
页码:875 / 878
页数:4
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