HYDROGEN-BONDING AND DIFFUSION IN CRYSTALLINE SILICON

[1] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982

[2] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[3] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2770 - 2773

[4] BOYCE JB, 1985, B AM PHYS SOC, V30, P354

[5] HYDROGEN IN DIAMOND [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (30): : L1027 - L1031

[6] BUDA F, 1988, 19TH P INT C PHYS SE, P1159

[7] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[8] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2187 - 2190

[9] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876

[10] THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1422 - 1425

[1] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982

[2] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[3] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2770 - 2773

[4] BOYCE JB, 1985, B AM PHYS SOC, V30, P354

[5] HYDROGEN IN DIAMOND [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (30): : L1027 - L1031

[6] BUDA F, 1988, 19TH P INT C PHYS SE, P1159

[7] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[8] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2187 - 2190

[9] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876

[10] THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1422 - 1425