HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR

被引：98

作者：

CAPIZZI, M

MITTIGA, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 14期

关键词：

D O I：

10.1063/1.98032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：918 / 920

页数：3

共 33 条

[1]

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[2]

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[6]

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[8] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :874-876

[9] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :787-789

[10] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

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PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

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