ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON

被引：97

作者：

JOHNSON, NM

MOYER, MD

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.95883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：787 / 789

页数：3

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