NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN

被引：382

作者：

PANKOVE, JI

CARLSON, DE

BERKEYHEISER, JE

WANCE, RO

机构：

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 51卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.51.2224

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：2224 / 2225

页数：2

相关论文

共 16 条

[1] THE ROLE OF HYDROGEN IN HEAVILY DOPED AMORPHOUS-SILICON
CARLSON, DE
SMITH, RW
MAGEE, CW
ZANZUCCHI, PJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (01): : 51 - 68
[2] DRESNER J, UNPUB
[3] EHRSTEIN JR, 1974, US NBS40010 SPEC PUB
[4] HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN
FRITZSCHE, H
TANIELIAN, M
TSAI, CC
GACZI, PJ
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3366 - 3369
[5] HYDROGENATION INDUCED IMPROVEMENT IN ELECTRONIC-PROPERTIES OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE
JASTRZEBSKI, L
LAGOWSKI, J
CULLEN, GW
PANKOVE, JI
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 713 - 716
[6] DOPING EFFECTS ON POST-HYDROGENATED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON
MAGARINO, J
KAPLAN, D
FRIEDERICH, A
DENEUVILLE, A
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (03): : 285 - 306
[7] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
MAZUR, RG
DICKEY, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &
[8] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON
PANKOVE, JI
LAMPERT, MA
TARNG, ML
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 439 - 441
[9] PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON
PANKOVE, JI
CARLSON, DE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 450 - 451
[10] PHOTO-LUMINESCENCE RECOVERY IN RE-HYDROGENATED AMORPHOUS SILICON
PANKOVE, JI
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 812 - 813