DOPING EFFECTS ON POST-HYDROGENATED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON

被引：61

作者：

MAGARINO, J ^{[1
]}

KAPLAN, D ^{[1
]}

FRIEDERICH, A ^{[1
]}

DENEUVILLE, A ^{[1
]}

机构：

[1] CNRS,TRANSIT PHASES GRP,F-38042 GRENOBLE,FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1982年 / 45卷 / 03期

关键词：

D O I：

10.1080/13642818208246405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：285 / 306

页数：22

共 27 条

[1] RETARDING CRYSTALLIZATION OF CVD AMORPHOUS-SILICON BY ALLOYING [J].

BOOTH, DC ;

ALLRED, DD ;

SERAPHIN, BO .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :213-218

[2] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].

CARLSON, DE ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83

[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[4]

DERSCH H, 1982, UNPUB

[5]

Duchemin J. P., 1977, Revue Technique Thomson-CSF, V9, P33

[6]

FRIEDERICH A, 1980, INT C SEMICOND, V15, P1233

[7]

HASEGAWA S, 1980, INT C SEMICOND, V15, P1237

[8] DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON [J].

HIROSE, M ;

TANIGUCHI, M ;

NAKASHITA, T ;

OSAKA, Y ;

SUZUKI, T ;

HASEGAWA, S ;

SHIMIZU, T .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :297-302

[9]

HIROSE M, 1977, 7TH P INT C AM LIQ S

[10] HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS BY PLASMA TREATMENT [J].

KAPLAN, D ;

SOL, N ;

VELASCO, G ;

THOMAS, PA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :440-442

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