DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON

[1] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[2] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (01) : 13 - 16

[3] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[4] COORDINATION OF ARSENIC IMPURITIES IN AMORPHOUS SILICON-HYDROGEN ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (11) : 712 - 715

[5] MADAN A, UNPUBLISHED

[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[7] SPEAR WE, 1974, LOCALIZED STATES AMO

[8] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 126 - 131

[9] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A543 - +

[1] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[2] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (01) : 13 - 16

[3] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[4] COORDINATION OF ARSENIC IMPURITIES IN AMORPHOUS SILICON-HYDROGEN ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (11) : 712 - 715

[5] MADAN A, UNPUBLISHED

[6] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[7] SPEAR WE, 1974, LOCALIZED STATES AMO

[8] SUBSTITUTIONAL DOPING OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 126 - 131

[9] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A543 - +