DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON

The effects of phosphorus doping and annealing on localized states in the gap for CVD a-Si are investigated using ESR. A close relation between the spin density and the linewidth is found out for undoped samples suggesting that the localized states are uniformly annealed out up to 1050 °C in spite of the crystallization of the samples at 700 ∼ 800 °C. The spin density also decreases with an increase of doping ratio, but the linewidth remains constant. For a heavily doped sample, a new signal with g=2.0043 is observed, and suggested to be due to localized states associated with incorporated phosphorus atoms. © 1979.