DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY

被引：504

作者：

WATKINS, GD

CORBETT, JW

机构：

来源：

PHYSICAL REVIEW | 1965年 / 138卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.138.A543

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A543 / +

页数：1

共 18 条

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[2] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[3] SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW LETTERS, 1961, 7 (08) :314-&

[4] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

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KRUPKA, DC ;

SILSBEE, RH .

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[7] FARADAY ROTATION FOR F BAND IN KCI [J].

LUTY, F ;

MORT, J .

PHYSICAL REVIEW LETTERS, 1964, 12 (02) :45-&

[8] BILDUNGSENERGIE FUR EINE LEERSTELLE IM GERMANIUM UND DAZUGEHORIGE GITTERVERZERRUNG [J].

SCHOLZ, A .

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[9] VERZERRUNGSFELD UND MECHANISCHE RELAXATION VON LEERSTELLEN IN GERMANIUM [J].

SCHOLZ, A ;

SEEGER, A .

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[10]

SCHOLZ A, 1965, 1964 P S RAD DAM SEM

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