DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY

被引：504

作者：

WATKINS, GD

CORBETT, JW

机构：

来源：

PHYSICAL REVIEW | 1965年 / 138卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.138.A543

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A543 / +

页数：1

共 18 条

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[15] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW .

DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :86-&

[16]

WATKINS GD, 1965, 1964 P S RAD DAM SEM

[17] ELECTRON-BOMBARDMENT DAMAGE IN SILICON [J].

WERTHEIM, GK .

PHYSICAL REVIEW, 1958, 110 (06) :1272-1279

[18]

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