DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON

被引：194

作者：

BERGMAN, K ^{[1
]}

STAVOLA, M ^{[1
]}

PEARTON, SJ ^{[1
]}

LOPATA, J ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.37.2770

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2770 / 2773

页数：4

相关论文

共 15 条

[1] DAWBER PG, 1969, P PHYS SOC LONDON, V81, P453
[2] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY
DELEO, GG
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864
[3] EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS
FANO, U
[J]. PHYSICAL REVIEW, 1961, 124 (06): : 1866 - &
[4] HYDROGEN CONCENTRATION AND DISTRIBUTION IN HIGH-PURITY GERMANIUM-CRYSTALS
HANSEN, WL
HALLER, EE
LUKE, PN
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) : 738 - 744
[5] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
HERRING, C
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772
[6] INFRA-RED ABSORPTION DUE TO LOCALIZED MODES OF VIBRATION OF IMPURITY COMPLEXES IN IONIC AND SEMICONDUCTOR CRYSTALS
NEWMAN, RC
[J]. ADVANCES IN PHYSICS, 1969, 18 (75) : 545 - &
[7] SPECTROSCOPIC EVIDENCE FOR THE HYDROGEN PASSIVATION OF ZINC ACCEPTORS IN GALLIUM-ARSENIDE
PAJOT, B
JALIL, A
CHEVALLIER, J
AZOULAY, R
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) : 305 - 307
[8] PAJOT B, IN PRESS PHYS REV B
[9] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[10] HYDROGEN LOCALIZATION NEAR BORON IN SILICON
PANKOVE, JI
ZANZUCCHI, PJ
MAGEE, CW
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 421 - 423