THE USE OF PIXE AND STIM IN MICROELECTRONICS ANALYSIS

被引:4
作者
BREESE, MBH
GRIME, GW
WATT, F
机构
[1] Nuclear Physics Laboratory, Oxford University, OX1 3RH Oxford, Keble Road
关键词
D O I
10.1016/0168-583X(93)95672-R
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The use of scanning PIXE in conjunction with scanning transmission ion microscopy (STIM) and Rutherford backscattering spectrometry (RBS) represents a powerful combination of imaging and analytical techniques for microelectronics analysis. Nuclear microprobe results from four different devices are presented here which show the applications and advantages of PIXE and STIM in microelectronics analysis.
引用
收藏
页码:341 / 346
页数:6
相关论文
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