OPTICAL-PROPERTIES OF DISLOCATIONS IN SILICON-CRYSTALS

被引：13

作者：

SHRETER, YG ^{[1
]}

REBANE, YT ^{[1
]}

PEAKER, AR ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New dislocation-related photoluminescence (PL) data associated with various types of extended defects in Si are considered. It is found that the D6 line in n-Si epitaxial layers is actually a doublet consisting of two lines separated by 2 meV. The D2 line strongly correlates with the presence of Frank dislocation loops in the crystals. The luminescence lines Dl, D2 and the band associated with rod-like defects are quenched by a magnetic field, the lines D4, D3 are not. The magneto-quenching effect is interpreted in terms of the kinetics of carrier capture by extended defects.

引用

页码：681 / 686

页数：6

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