A CLASSIFICATION OF THE DISLOCATION-RELATED PHOTOLUMINESCENCE IN SILICON

被引：26

作者：

LELIKOV, YS

REBANE, YT

RUVIMOV, S

SITNIKOVA, AA

TARHIN, DV

SHRETER, YG

机构：

[1] A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Petersburg

[2] University of Bristol, H.H. Wills Physics Laboratory, Bristol, BS8 ITL, Royla Fort, Tyndall Avenue

[3] UMIST, Centre for Electronic Materials, Manchester, M60IQD

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 172卷 / 01期

关键词：

D O I：

10.1002/pssb.2221720107

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence (PL) spectra of the basic extended defects in Si are obtained. A new classification of the PL lines is proposed according to the squared edge components of the Burger's vectors of the dislocations which surround the structural defects. The different manifold splitting of the various dislocation-related PL lines are predicted for external perturbations violating the crystal symmetry. The possibility of the passivation of these dislocation cores by transition metal impurities is also discussed.

引用

页码：53 / 63

页数：11

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